Patent: Multi Layer AF Sensor

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Another autofocus related patent has appeared from Canon. This time in the form of a foveon style multilayer AF sensor.</p>
<p><strong>Patent Publication No. 2015-37217</strong></p>
<ul>
<li>Published 2015.2.23</li>
<li>Filing date 2013.8.12</li>
</ul>
<p><strong>Canon patent</strong></p>
<ul>
<li>AF sensor</li>
<li>In the depth direction, I comprises a first layer, the second layer, the photoelectric conversion portion of the third layer</li>
<li>The second layer is for monitoring, detecting the amount of light that is received in real-time, to control the accumulation time</li>
<li>The third layer in a bright environment, the dark environment so that the use of the first layer, sensitivity can be switched</li>
<li>Furthermore, in a dark environment is used by adding the first and third layers</li>
</ul>
<p>Source: [<a href="http://egami.blog.so-net.ne.jp/2015-02-25" target="_blank">Egami</a>]</p>
 
Should help. I noticed that while say the 40D had better AF than the 20D for night soccer it actually often did worse under intense southern near noon sun, like they could only tune it for darker shooting and it would get overflow if it was too bright and opposite regarding the 20D.
 
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The invention does indicate a separate layer with a phase detect sensor on it. This would probably be used in a mirrorless camera that did not use dual pixels.

However, the main purpose of the invention seems to be equalizing the sensitivity of the different layers. The phase detect sensor might not be there for DSLR's. It is surprising that the section indicating "Effect of the Invention" does not mention autofocus.

20150225121312824797.gif



"The object of this invention is providing the drive method of a photoelectric conversion device, a focus detecting device, an imaging system, and a photoelectric conversion device which can reduce the output level difference of two or more photoelectric conversion parts. "

EFFECT OF THE INVENTION

[Effect of the Invention]
[0007]
According to the present invention, since the position of the 1st and a second photoelectric conversion part corresponds substantially on a plane, the output level difference of the 1st and a second photoelectric conversion part can be reduced.
 
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Mt Spokane Photography said:
K-amps said:
IglooEater said:
Does this mean we should be debating the DR of autofocus chips? :O ;D

:-) They certainly seem to have DR on their minds.... I bet the R & D area has DR on their Coffee mugs :-)

Where did you see anything discussing DR in the patent? I waded thru most of it and saw no mention of DR.

It can handle a wide dynamic range of lighting conditions for AF in ideal fashion, being optimized for both blaring sun and dim dungeons.
 
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LetTheRightLensIn said:
Mt Spokane Photography said:
K-amps said:
IglooEater said:
Does this mean we should be debating the DR of autofocus chips? :O ;D

:-) They certainly seem to have DR on their minds.... I bet the R & D area has DR on their Coffee mugs :-)

Where did you see anything discussing DR in the patent? I waded thru most of it and saw no mention of DR.

It can handle a wide dynamic range of lighting conditions for AF in ideal fashion, being optimized for both blaring sun and dim dungeons.

I think you are joking, but just in case ...

Here is a copy of the Claims from The Japanese patent website as converted by their translator to English. I see no claim as to improved DR, or even a mention of it.



"CLAIMS

[Claim(s)]
[Claim 1]
It is the photoelectric conversion device formed in a semiconductor substrate,
A first photoelectric conversion part formed with the 1st conductivity type,
A second photoelectric conversion part which was formed in a position deeper than said first photoelectric conversion part to a depth direction of the aforementioned semiconductor substrate, and was formed with the 2nd conductivity type,
A monitor section which monitors a signal of said second photoelectric conversion part during an electric charge storage period of said first photoelectric conversion part
A ****(ing) photoelectric conversion device.
[Claim 2]
The photoelectric conversion device according to claim 1, wherein area of said second photoelectric conversion part is more than area of said first photoelectric conversion part.
[Claim 3]
It has the 3rd photoelectric conversion part that was formed in a position deeper than said second photoelectric conversion part to a depth direction of the aforementioned semiconductor substrate, and was formed with the 1st conductivity type,
The photoelectric conversion device according to claim 1 or 2, wherein the aforementioned monitor section monitors a signal of said second photoelectric conversion part during an electric charge storage period of said first photoelectric conversion part and said 3rd photoelectric conversion part.
[Claim 4]
The photoelectric conversion device according to claim 3 having a switch part which outputs any one signal of said first photoelectric conversion part and said 3rd photoelectric conversion part.
[Claim 5]
The photoelectric conversion device according to claim 3 or 4 having an adder unit for adding a signal of said first photoelectric conversion part and said 3rd photoelectric conversion part.
[Claim 6]
A photoelectric conversion device of a description in any 1 item of Claims 3-5 having an amplifier control part which controls an amplification factor of an output signal of said first photoelectric conversion part and said 3rd photoelectric conversion part based on an output signal of said second photoelectric conversion part.
[Claim 7]
A photoelectric conversion device of a description in any 1 item of Claims 3-6 having a storage time control part which controls charge storage time of said first photoelectric conversion part and said 3rd photoelectric conversion part based on an output signal of said second photoelectric conversion part.
[Claim 8]
A photoelectric conversion device of a description in any 1 item of Claims 1-7 having the amplifier which outputs a signal which carried out time quadrature of the current which fixes electric potential of said second photoelectric conversion part, and is outputted from said second photoelectric conversion part.
[Claim 9]
A focus detecting device carrying out two or more owners of the photoelectric conversion device of a description to any 1 item of Claims 1-8.
[Claim 10]
The focus detecting device according to claim 9,
It has a lens which images an optical image,
An imaging system driving the aforementioned lens according to an output signal of the aforementioned focus detecting device.
[Claim 11]
A first photoelectric conversion part formed with the 1st conductivity type of a semiconductor substrate,
It is a drive method of a photoelectric conversion device which has the second photoelectric conversion part which was formed in a position deeper than said first photoelectric conversion part to a depth direction of the aforementioned semiconductor substrate, and was formed with the 2nd conductivity type,
A drive method of a photoelectric conversion device characterized by controlling charge storage time of another side according to a signal based on either said first photoelectric conversion part or said second photoelectric conversion parts."
 
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Mt Spokane Photography said:
LetTheRightLensIn said:
Mt Spokane Photography said:
K-amps said:
IglooEater said:
Does this mean we should be debating the DR of autofocus chips? :O ;D

:-) They certainly seem to have DR on their minds.... I bet the R & D area has DR on their Coffee mugs :-)

Where did you see anything discussing DR in the patent? I waded thru most of it and saw no mention of DR.

It can handle a wide dynamic range of lighting conditions for AF in ideal fashion, being optimized for both blaring sun and dim dungeons.

I think you are joking, but just in case ...

Here is a copy of the Claims from The Japanese patent website as converted by their translator to English. I see no claim as to improved DR, or even a mention of it.



"CLAIMS

[Claim(s)]
[Claim 1]
It is the photoelectric conversion device formed in a semiconductor substrate,
A first photoelectric conversion part formed with the 1st conductivity type,
A second photoelectric conversion part which was formed in a position deeper than said first photoelectric conversion part to a depth direction of the aforementioned semiconductor substrate, and was formed with the 2nd conductivity type,
A monitor section which monitors a signal of said second photoelectric conversion part during an electric charge storage period of said first photoelectric conversion part
A ****(ing) photoelectric conversion device.
[Claim 2]
The photoelectric conversion device according to claim 1, wherein area of said second photoelectric conversion part is more than area of said first photoelectric conversion part.
[Claim 3]
It has the 3rd photoelectric conversion part that was formed in a position deeper than said second photoelectric conversion part to a depth direction of the aforementioned semiconductor substrate, and was formed with the 1st conductivity type,
The photoelectric conversion device according to claim 1 or 2, wherein the aforementioned monitor section monitors a signal of said second photoelectric conversion part during an electric charge storage period of said first photoelectric conversion part and said 3rd photoelectric conversion part.
[Claim 4]
The photoelectric conversion device according to claim 3 having a switch part which outputs any one signal of said first photoelectric conversion part and said 3rd photoelectric conversion part.
[Claim 5]
The photoelectric conversion device according to claim 3 or 4 having an adder unit for adding a signal of said first photoelectric conversion part and said 3rd photoelectric conversion part.
[Claim 6]
A photoelectric conversion device of a description in any 1 item of Claims 3-5 having an amplifier control part which controls an amplification factor of an output signal of said first photoelectric conversion part and said 3rd photoelectric conversion part based on an output signal of said second photoelectric conversion part.
[Claim 7]
A photoelectric conversion device of a description in any 1 item of Claims 3-6 having a storage time control part which controls charge storage time of said first photoelectric conversion part and said 3rd photoelectric conversion part based on an output signal of said second photoelectric conversion part.
[Claim 8]
A photoelectric conversion device of a description in any 1 item of Claims 1-7 having the amplifier which outputs a signal which carried out time quadrature of the current which fixes electric potential of said second photoelectric conversion part, and is outputted from said second photoelectric conversion part.
[Claim 9]
A focus detecting device carrying out two or more owners of the photoelectric conversion device of a description to any 1 item of Claims 1-8.
[Claim 10]
The focus detecting device according to claim 9,
It has a lens which images an optical image,
An imaging system driving the aforementioned lens according to an output signal of the aforementioned focus detecting device.
[Claim 11]
A first photoelectric conversion part formed with the 1st conductivity type of a semiconductor substrate,
It is a drive method of a photoelectric conversion device which has the second photoelectric conversion part which was formed in a position deeper than said first photoelectric conversion part to a depth direction of the aforementioned semiconductor substrate, and was formed with the 2nd conductivity type,
A drive method of a photoelectric conversion device characterized by controlling charge storage time of another side according to a signal based on either said first photoelectric conversion part or said second photoelectric conversion parts."

For the record, yes we're joking; anything to touch on DR ::)
 
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